CGHV60075D5

Overview

The CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates at a drain voltage of 50V and supports frequencies up to 6GHz. The device delivers a typical output power of 75W with a typical small-signal gain of 17dB at 6GHz. It features a high typical power-added efficiency of 65%. The component is supplied in a die package format.

Feature Summary

• Utilizes gallium nitride (GaN) HEMT technology for superior performance compared to silicon or gallium arsenide
• Designed for high-power RF applications with 50V operation capability
• Provides high power-added efficiency and significant output power density

Applications

• S-band radar systems
• L-band radar amplifiers
• C-band radar amplifiers
• High-power RF amplifier modules

Procurement Notes

Verify the specific package variant, as the CGHV60075D5-GP4 denotes a tray-packaged die version. Confirm RoHS compliance status and check for recent Product Change Notifications regarding material or assembly changes. Ensure compatibility with 50V bias requirements and thermal management solutions suitable for high-power GaN devices.

Selection Notes

Select this component for applications requiring high output power and efficiency in the S, L, and C bands. Consider the 17dB gain at 6GHz and 65% efficiency metrics. Evaluate thermal constraints due to the die package type. Compare against lower power variants if system requirements do not necessitate 75W output.

Part Context

This part belongs to the CGHV series of GaN HEMTs from MACOM. It is distinct from surface-mount packages like the CGHV27015S. The series targets broadband radar and communication amplifiers. The CGHV60075D5 represents a higher power option within the family, optimized for robust RF performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.