CGHV60170D-GP4

Overview

The CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power applications. It operates at voltages up to 50 V with a typical saturated power output of 170 W and a drain efficiency of 65%. The device provides 18 dB small signal gain at 4 GHz and 17 dB at 6 GHz, supporting operation up to 6 GHz. Key electrical characteristics include a breakdown voltage of 125 V, a gate pinch-off voltage ranging from -3.8 V to -2.3 V, and a maximum drain current of 12.6 A.

Feature Summary

• High power density and wide bandwidth capabilities inherent to GaN HEMT technology
• Operates at 50 V with high breakdown voltage for robust performance
• Provides high small signal gain across the operational frequency range
• Bare die format utilizing thermosonic ball or wedge bonding

Applications

• Broadband amplifiers
• Tactical communications systems
• Satellite communications
• Industrial, Scientific, and Medical (ISM) amplifiers
• Linear amplifiers for OFDM, W-CDMA, LTE, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific revision level against the latest MACOM datasheet before finalizing design integration. Confirm that the bare die handling procedures, including vacuum collet pick-up and eutectic AuSn soldering, align with your assembly capabilities. Ensure electrostatic discharge precautions are strictly followed during storage and installation.

Selection Notes

Select this component when high output power and efficiency are required in a compact form factor. The 50 V operating voltage suits high-power RF designs. Consider the thermal resistance and mounting requirements for the bare die configuration. Evaluate the need for large signal models compatible with ADS and MWO for accurate circuit simulation.

Part Context

This part belongs to MACOM's CGHV series of high-voltage GaN HEMTs. These devices leverage superior material properties compared to silicon or gallium arsenide, offering higher saturation electron drift velocity and thermal conductivity. The series targets demanding RF and microwave applications requiring significant power density.

Replacement Considerations

Consult MACOM documentation for direct substitutes within the CGHV family. Verify pinout compatibility and electrical specifications if considering alternative vendors. No public confirmed substitute part numbers are listed in the provided source material.