CGHV96130F

Overview

The CGHV96130F is a gallium nitride (GaN) amplifier operating from 8.4 to 9.6 GHz with 50-ohm input and output matching. It delivers 130 W of output power, achieving a typical power added efficiency of 42% and a power gain of 7.5 dB at 9.4 GHz. The device utilizes a metal/ceramic flanged package (440217) for optimal thermal performance. Absolute maximum ratings include a drain-source voltage of 120 V, a gate-source voltage range of -10 V to +2 V, and a maximum junction temperature of 225°C.

Feature Summary

• Internally matched to 50 ohms at both input and output ports
• High power density and wide bandwidth capabilities inherent to GaN technology
• Metal/ceramic flanged package designed for superior electrical and thermal performance

Applications

• Marine radar systems
• Weather monitoring equipment
• Air traffic control infrastructure
• Maritime vessel traffic control
• Port security networks

Procurement Notes

Verify the specific package type 440217 against your mechanical constraints. Confirm that your thermal management system can handle the specified junction-to-case thermal resistance under pulsed conditions. Ensure your RF test fixtures support the required frequency range and power levels for accurate characterization.

Selection Notes

Select this component when high power density and broad bandwidth are critical requirements in the X-band spectrum. Consider its internal matching capability if minimizing external passive components is desired. Evaluate the thermal dissipation needs carefully due to the high power density and absolute maximum ratings provided in the datasheet.

Part Context

This part belongs to MACOM's CGHV series of high-voltage GaN HEMTs on silicon carbide substrates. These transistors leverage the superior properties of GaN, such as higher breakdown voltage and saturated electron drift velocity, compared to traditional silicon or gallium arsenide technologies.

Replacement Considerations

Public confirmed substitute part numbers: None identified.