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The CLF1G0035-100,112 is a power LDMOS transistor manufactured by Ampleon USA Inc. Designed for high-efficiency RF amplification, it operates within a frequency range of DC to 3.5 GHz. The device delivers an output power of 100W with a power gain ranging from 11.2 dB to 15.5 dB. It functions at a drain voltage of 50V and achieves an efficiency between 46.4% and 67.4%. Packaged in SOT539A, the component exhibits robustness against VSWR conditions up to 10:1.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing thermal management designs given the 100W output capability. Cross-reference the part number with authorized distributors to confirm current availability status and lead times before finalizing procurement plans.
Select this component when designing systems requiring 100W output power within the 3.5 GHz bandwidth. Consider the 50V operating voltage and SOT539A footprint during PCB layout. Evaluate thermal dissipation requirements based on the specified efficiency range to ensure stable operation under continuous wave conditions.
This model belongs to the CLF1G0035 series of power LDMOS transistors. Related variants include the CLF1G0035S-100, CLF1G0035-50, and CLF1G0035S-50. These components share similar architectural foundations but differ in packaging or power ratings, serving as alternatives within the same product family for various RF design needs.
Potential substitutes include the CLF1G0035S-100 and BLF573S. Verify pinout compatibility and thermal characteristics before substitution. Consult official datasheets to ensure electrical parameters match the original design requirements.