CLF1G0035-50,112

Overview

The Ampleon CLF1G0035-50,112 is a broadband power LDMOS transistor designed for high-efficiency RF amplification. It operates across a frequency range of DC to 3.5 GHz and delivers an output power of 50 W at a drain voltage of 50 V. The device provides a typical power gain between 11.2 dB and 15.5 dB, with drain efficiency ranging from 46.4% to 67.4%. Packaged in the SOT539A surface-mount format, it features robust performance capable of sustaining a VSWR of 10:1, making it suitable for demanding broadband applications requiring stable signal amplification.

Feature Summary

• Broadband operation spanning DC to 3.5 GHz
• High power gain and drain efficiency
• Robustness against high VSWR conditions

Applications

• RF power amplifiers
• Industrial applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a 50 W output capability is required within the DC to 3.5 GHz bandwidth. Compare against the 100 W variant (CLF1G0035-100) if higher power density is needed. Ensure the design accommodates the SOT539A package thermal requirements and the 50 V drain bias specification for optimal linear performance.

Part Context

This part belongs to the CLF1G0035 series of power LDMOS transistors from Ampleon. It shares the same core technology and frequency range as the higher-power CLF1G0035-100 but is optimized for lower output power applications. The series is characterized by its broadband nature and ruggedness, distinguishing it from narrowband specialized RF devices.

Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided documentation. Designers should consult official Ampleon resources for qualified alternatives or cross-reference with similar 50 W broadband LDMOS transistors from other manufacturers.