CLF1G0035S-200PU

CLF1G0035S-200PU

$378.73
  • Description:RF MOSFET GAN HEMT
  • Series:-

SKU:b08f285b485c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET GAN HEMT
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:GaN HEMT
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

Download product information

CLF1G0035S-200PU

Overview

The CLF1G0035S-200PU is a 200 W general-purpose broadband Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by Ampleon. It operates from DC to 3.5 GHz and utilizes an earless flanged ceramic package (SOT1228B). The device supports high voltage operation at 50 V with a drain-source breakdown voltage of 150 V. Typical RF performance at 25 °C case temperature includes a power gain of 9 dB to 14 dB, drain efficiency up to 58%, and third-order intermodulation distortion (IMD3) of -40 dBc to -45 dBc under two-tone continuous wave conditions. It exhibits excellent ruggedness, capable of withstanding a Voltage Standing-Wave Ratio (VSWR) of 10:1.

Feature Summary

  • Broadband frequency coverage extending from DC to 3.5 GHz
  • High ruggedness capability supporting a VSWR of 10:1
  • Thermally enhanced earless flanged ceramic packaging

Applications

  • Commercial wireless infrastructure including cellular and WiMAX systems
  • Industrial, scientific, and medical (ISM) equipment
  • Radar and jamming systems
  • Public mobile radio transmitters
  • Electromagnetic compatibility (EMC) testing sources

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant. The 'S' designation indicates the earless flanged SOT1228B package, while the 'P' denotes the standard flanged version. Ensure procurement channels provide original manufacturer data sheets for accurate pinout and thermal resistance specifications prior to integration.

Selection Notes

Select this component for applications requiring high output power across a wide frequency range without retuning. The device requires a class-AB bias configuration for optimal performance. Designers must account for the specific load-pull impedances provided in the datasheet to achieve maximum power or efficiency targets. Thermal management via the exposed flange is critical for maintaining junction temperature within safe operating limits.

Part Context

This part belongs to the CLF1G0035 series of broadband GaN HEMTs. The CLF1G0035S-200PU differs from the CLF1G0035-200P primarily in its mechanical package; the 'S' variant uses the SOT1228B earless flanged design, whereas the standard version uses the SOT1228A flanged package with mounting holes. Both share identical electrical characteristics and performance metrics.

Replacement Considerations

Direct replacements are not explicitly listed in the public datasheet. Evaluate other Ampleon broadband GaN HEMTs based on matching power levels, frequency ranges, and package dimensions. Verify that any substitute meets the required VSWR ruggedness and thermal resistance specifications.

CLF1G0035S-200PUCLF1G0035S-200PU
$378.73
Buy Now