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The CLF3H0060-10U is a 10 W general-purpose, unmatched broadband GaN-SiC HEMT transistor designed for operation from DC to 6.0 GHz. It utilizes a thermally enhanced air-cavity ceramic package (SOT1227A) suitable for both CW and pulsed applications. Key electrical parameters include a drain-source voltage of 150 V, a typical power gain of 20.1 dB at 2500 MHz, and a drain efficiency of 63% under pulsed conditions. The device features low thermal resistance and high ruggedness, supporting agile performance in RF power amplification.
Verify the specific ordering suffix 'U' corresponds to the required packing description and minimum orderable quantity as defined in the official Ampleon ordering information table. Confirm RoHS compliance status via the manufacturer's website prior to procurement. Ensure ESD handling precautions are strictly followed during storage and assembly due to the device's sensitivity classification.
Select this component for designs requiring a 10 W output power level across a wide frequency range up to 6.0 GHz. Consider the SOT1227A package dimensions and mounting hole requirements for PCB layout. Evaluate thermal management strategies based on the specified thermal resistance values to maintain junction temperature within safe operating limits during continuous or pulsed operation.
This part belongs to the CLF3H0060 series of GaN-SiC HEMTs manufactured by Ampleon. It shares functional similarities with the CLF3H0060S-10 variant, which differs primarily in the package outline (SOT1227B). Both devices offer identical electrical performance characteristics but utilize different physical housing configurations for integration into RF circuits.
The CLF3H0060S-10U is the direct sibling part number within the same product family, offering identical electrical specifications but housed in the SOT1227B earless flanged ceramic package instead of the SOT1227A.