CLF3H0060S-10U

Overview

The CLF3H0060S-10U is a 10 W general purpose, unmatched broadband GaN-SiC HEMT transistor designed for operation from DC to 6.0 GHz. It utilizes a thermally enhanced air-cavity ceramic package (SOT1227B) supporting both CW and pulsed applications. Key electrical parameters include a drain-source voltage of 150 V, input capacitance of 2.92 pF, output capacitance of 1.78 pF, and reverse transfer capacitance of 0.25 pF at 50 V. At 2500 MHz with pulsed CW signals, it delivers 10 W output power with typical gain of 20.1 dB and drain efficiency of 63%. The device features a thermal resistance from channel to case of 9.0 K/W.

Feature Summary

• High efficiency and low thermal resistance design
• Excellent ruggedness for demanding RF environments
• Broadband operation capability from DC to 6.0 GHz
• Agile performance in an easy-to-apply unmatched configuration

Applications

• Broadband tactical communication systems
• Broadband countermeasures equipment
• Instrumentation amplifiers
• Radar systems operating in UHF, L-band, and S-band

Procurement Notes

Verify the specific ordering suffix 'U' corresponds to the tray packing description provided in official documentation. Confirm RoHS compliance status directly through manufacturer resources as indicated in the product details section. Ensure all handling precautions regarding ElectroStatic Discharge (ESD) sensitivity are strictly followed during procurement and storage to maintain component integrity.

Selection Notes

Select this component for designs requiring high power density across a wide frequency range without matching networks. Verify that the application circuit can support the required 50 V drain-source voltage and manage the thermal load given the 9.0 K/W thermal resistance. Ensure the PCB layout accommodates the SOT1227B package dimensions and mounting hole specifications for proper heat dissipation.

Part Context

This part belongs to the CLF3H0060 series of GaN-SiC HEMTs manufactured by Ampleon. It shares core characteristics with the CLF3H0060-10 but differs in package configuration, utilizing the SOT1227B earless flanged ceramic package instead of the SOT1227A variant. Both variants target similar broadband RF power applications.

Replacement Considerations

The CLF3H0060-10U serves as a direct functional alternative within the same series, differing primarily in the SOT1227A package which includes mounting holes compared to the SOT1227B earless package of the CLF3H0060S-10U. Verify mechanical fit and thermal interface requirements when substituting between these two package types.