CLL3H0914L-700U

Overview

The CLL3H0914L-700U is a 700 W internally pre-matched RF GaN-SiC HEMT power transistor designed for the 0.9 GHz to 1.4 GHz frequency range. It features an internal stability network and excellent thermal resistance suitable for short- and long-pulse applications. The device operates with a drain-source voltage of 50 V and delivers high efficiency. Key electrical parameters include a drain-source breakdown voltage of 150 V, a gate-source threshold voltage of -2.9 V, and a drain-source on-state resistance of 35 mΩ. Typical RF performance at 1200 MHz to 1400 MHz includes an output power of up to 850 W, a power gain of 16.0 dB, and a drain efficiency of up to 71% under pulsed conditions.

Feature Summary

• Internally pre-matched GaN-SiC HEMT with integrated stability network
• Low thermal resistance for effective heat dissipation
• Excellent ruggedness capable of withstanding high VSWR mismatches
• Optimized for high efficiency in both short-pulse and long-pulse avionics applications

Applications

• Avionics systems requiring high-efficiency short-pulse amplification
• Long-pulse L-band radar transmitters
• RF power amplifier designs operating between 0.9 GHz and 1.4 GHz

Procurement Notes

Verify the specific package variant required for the design, as the CLL3H0914L-700U corresponds to the SOT502A flanged ceramic package, while the LS variant uses SOT502B. Confirm RoHS compliance status through official Ampleon channels prior to integration. Ensure handling procedures adhere to ESD sensitivity classifications C2B and 1A to prevent device damage during assembly and testing.

Selection Notes

Select this component for applications demanding high power density and efficiency in the L-band spectrum. The internal matching simplifies circuit design by reducing external component count. Consider the thermal management requirements based on the specified transient thermal impedance values. Verify that the application's duty cycle and pulse width align with the tested performance curves provided in the datasheet for accurate power and efficiency predictions.

Part Context

This part belongs to the CLL3H0914 series of L-band internally pre-matched GaN-SiC HEMTs from Ampleon. The 'L' suffix denotes the SOT502A package with mounting holes, distinguishing it from the 'LS' variant which uses the SOT502B earless flanged package. Both variants share identical electrical characteristics and are intended for similar high-power RF applications within the same frequency band.

Replacement Considerations

CLL3H0914LS-700U (SOT502B package)