SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CLP24H4S30PXY is a 30 W GaN-SiC HEMT power transistor optimized for Continuous Wave (CW) power and efficiency in the 2400 MHz to 2500 MHz frequency range. It operates with a drain-source voltage of 50 V and delivers 25 W output at 17 dB gain with 75% drain efficiency in class-AB operation. The device features an internally matched input and utilizes a DFN-7x6.5-6-1 package. Limiting values include a maximum VDS of 150 V, VDD of 52 V, and a channel temperature limit of 225 °C.
Verify the specific ordering suffix XY against official Ampleon documentation to confirm packing details. The datasheet indicates that the XY suffix corresponds to a TR7 packing format with a minimum orderable quantity of 100 pieces. Ensure compliance with RoHS standards as referenced in the product details. Confirm dry pack storage requirements are met prior to assembly.
Select this component for high-power CW applications requiring integrated input matching. Verify thermal management capabilities support the specified channel temperature limits. Ensure the application circuit accommodates the 50 V operating voltage and 2400–2500 MHz frequency band. Check ESD sensitivity classifications for handling precautions during integration.
This part belongs to the CLP24H4S30P family from Ampleon, utilizing Gallium Nitride on Silicon Carbide technology. The XY suffix denotes a specific tape-and-reel packaging variant within the DFN-7x6.5-6-1 form factor. It is designed for broadband RF power amplification where size and efficiency are critical constraints.
Consult Ampleon for verified substitutes. The base model CLP24H4S30P shares identical electrical specifications but may differ in packaging configuration. Verify pinout compatibility and thermal resistance characteristics before substitution.