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Product Detailed Parameters
- Description：IGBT MOD 1200V 200A 1340W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：1340 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：35 nF @ 10 V
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Overview
The CM200DY-24A is a dual IGBT module from the Powerex IGBTMOD A-series, rated for 1200 V collector-emitter voltage and 200 A continuous collector current. It integrates two N-channel IGBT transistors in a half-bridge configuration, each paired with a reverse-connected super-fast recovery free-wheel diode. The components are isolated from the copper heat-sinking baseplate to simplify system assembly. Designed for high-power switching applications, it supports operation up to a junction temperature of 150°C.
Feature Summary
- Half-bridge topology with integrated super-fast recovery free-wheel diodes
- Isolated baseplate design for simplified thermal management
- Low drive power requirements
- Low saturation voltage (VCE(sat))
Applications
- AC motor control systems
- Uninterruptible power supplies (UPS)
- Battery-powered supply units
Procurement Notes
Verify manufacturer authenticity through official Powerex channels or authorized distributors. Confirm part number suffixes match specific manufacturing batches. Request original datasheets and test reports to validate electrical parameters against specifications. Ensure proper handling procedures are followed due to semiconductor sensitivity.
Selection Notes
Select this component for high-current switching applications requiring robust half-bridge configurations. Evaluate thermal resistance characteristics against system cooling capabilities. Verify gate drive compatibility with the specified drive power requirements. Consider the isolation features for safety and ease of integration into existing power electronics architectures.
Part Context
This module belongs to the IGBTMOD A-series, designed specifically for high-power switching uses. It represents a discrete solution combining IGBTs and diodes in a single package, offering a balance between performance and thermal efficiency for industrial power conversion tasks.
Replacement Considerations
Cross-reference with other 1200V/200A half-bridge modules from manufacturers like Mitsubishi Electric or Infineon. Ensure pinout compatibility and thermal interface dimensions match before substitution. Verify equivalent switching speeds and diode recovery characteristics to maintain system stability.
