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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.43A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：430mA
- Rds On (Max) @ Id, Vgs：900mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：175pF @ 16V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CMLDM5757 TR PBFREE is a surface-mount dual P-channel enhancement-mode MOSFET in an SOT-563 package. It features a drain-source voltage of 20V and a continuous drain current of 430mA with a maximum power dissipation of 350mW. The device exhibits low on-resistance, ranging from 0.9Ω at 4.5V gate drive to 2.0Ω at 1.8V. Operating junction temperatures span from -65°C to +150°C, and the component includes ESD protection up to 1800V via the Human Body Model.
Feature Summary
- Dual P-channel configuration designed for high-speed pulsed amplifier and driver applications
- Logic level compatible operation with very low threshold voltage
- Integrated ESD protection rated up to 1800V (Human Body Model)
- Compact SOT-563 surface mount package
Applications
- Load switch and level shifting circuits
- Battery charging systems
- Boost switch implementations
- Electro-luminescent backlighting drivers
Procurement Notes
Verify the specific ordering suffix when sourcing this component. The manufacturer designates lead-free plated devices using the PBFREE suffix. Confirm that the requested part number matches the required plating specification to ensure compliance with environmental standards and correct material composition.
Selection Notes
Select this component for designs requiring dual P-channel switching in a small footprint. Evaluate thermal resistance requirements based on the copper mounting pad area, as power dissipation ratings vary between ceramic/aluminum cores and FR-4 epoxy boards. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance.
Part Context
This component belongs to the Central Semiconductor silicon MOSFET family. It serves as the complementary counterpart to the CMLDM3737, which is a dual N-channel device. Both parts share similar packaging and are intended for comparable high-speed switching applications within portable and battery-powered electronics.
Replacement Considerations
The datasheet identifies the CMLDM3737 as the complementary dual N-channel device. No other direct substitute part numbers are documented in the provided source material.
