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Product Detailed Parameters
- Description：MOSFET P-CH 20V 860MA SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：860mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.56 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-563
- Package / Case：SOT-563, SOT-666
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Overview
The CMLDM8120G TR PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes a P-Channel DMOS process and is housed in an SOT-563 package. The device supports a drain-source voltage of 20 V and a continuous drain current of 860 mA at 25°C. Key electrical parameters include a maximum gate-source voltage of 8.0 V, a threshold voltage ranging from 0.45 V to 1.0 V, and a typical total gate charge of 3.56 nC. Power dissipation varies between 150 mW and 350 mW depending on the PCB thermal pad area.
Feature Summary
- Logic level compatible design with low threshold voltage for efficient drive requirements
- Low on-resistance characteristics optimized for high-speed pulsed amplifier and driver applications
- Halogen-free construction compliant with environmental standards
Applications
- Load and power switches
- Power supply converter circuits
- Battery-powered portable equipment
Procurement Notes
Verify that the ordering suffix 'PBFREE' confirms lead-free plating as specified in manufacturer documentation. Confirm the 'TR' designation indicates tape and reel packaging. Ensure the component matches the specific P-channel enhancement-mode configuration required for the circuit design before procurement.
Selection Notes
Select this component when a compact P-channel MOSFET with logic-level compatibility is required. Consider the thermal resistance and power dissipation limits relative to the available copper mounting pad area on the printed circuit board. Evaluate the 20 V drain-source voltage rating against the maximum operating voltage of the application.
Part Context
This part belongs to the Central Semiconductor CMLDM series of surface-mount silicon MOSFETs. It is specifically designed using a P-Channel DMOS process to provide enhanced performance in space-constrained designs. The SOT-563 package allows for high-density mounting on printed circuit boards while maintaining necessary electrical isolation and thermal management capabilities.
Replacement Considerations
Consult official datasheets to identify parameter-equivalent substitutes. Verify pinout compatibility and ensure replacement devices meet or exceed the 20 V drain-source voltage and 860 mA continuous drain current specifications.
