CP223-2N3866-CT

Overview

The CP223-2N3866-CT is a silicon planar epitaxial NPN power transistor manufactured by Central Semiconductor Corp. It is designed for high-power radio frequency applications, specifically functioning as an RF power amplifier in the VHF and UHF bands. The device utilizes a hermetically sealed metal case construction to ensure reliability under demanding thermal conditions. Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum collector current of 1A. It is rated for a total power dissipation of 40W when mounted on a heat sink, with a maximum junction temperature capability of 200°C. The component operates within a standard ambient temperature range from -65°C to +175°C.

Feature Summary

• Hermetically sealed metal package construction for environmental protection
• Planar epitaxial silicon design optimized for RF power amplification
• High thermal stability supporting operation up to 200°C junction temperature

Applications

• VHF/UHF RF power amplification stages
• Military communication equipment transmitters
• Industrial RF heating and plasma generation systems

Procurement Notes

Verify the specific suffix designation against the manufacturer's latest datasheet to confirm pinout orientation and mechanical dimensions. Ensure that the procurement channel provides traceability documentation required for aerospace or defense specifications. Confirm that the component meets RoHS exemptions if applicable to the intended military application.

Selection Notes

Select this component when designing circuits requiring robust RF power handling at moderate voltages. Evaluate the thermal resistance requirements carefully, as the 40W rating depends on effective heat sinking. Compare alternative packages if space constraints differ from the standard TO-3 style housing typically associated with this series.

Part Context

This part belongs to the broader family of discrete power transistors produced by Central Semiconductor Corp. These devices are commonly utilized in legacy and specialized RF infrastructure where high reliability and radiation hardness are prioritized over miniaturization. The numbering convention aligns with historical military-grade semiconductor standards.

Replacement Considerations

Consult official substitution guides for equivalent NPN RF power transistors such as the 2N3866 variant. Verify that any replacement matches the original pin configuration and thermal interface specifications to maintain circuit integrity.