CP398X-CTLDM303N-WN

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:ee3ac975bbed Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP398X-CTLDM303N-WN

Overview

The CP398X-CTLDM303N is an N-channel enhancement-mode silicon MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a drain-source voltage of 30 V, gate-source voltage of 12 V, continuous drain current of 3.6 A, and maximum pulsed drain current of 14.4 A. The junction temperature range is -55 to +150 °C. Electrical characteristics include a typical on-resistance of 0.04 Ω at VGS=4.5V and 0.078 Ω at VGS=2.5V. Total gate charge is 13 nC, with turn-on time of 15 ns and turn-off time of 29 ns under specified test conditions.

Feature Summary

Designed for high-speed pulsed amplifier and driver applications
Enhancement-mode N-channel silicon construction
Capable of handling significant pulsed current loads

Applications

High speed pulsed amplifiers
Driver circuits

Procurement Notes

Verify the specific suffix required for your packaging needs. Options include unsawn wafers (WN), sawn wafers on plastic rings (WR), singulated die in trays (CT), or visually inspected singulated die (CM). Contact Central Semiconductor sales representatives directly for special orders such as sawn wafers on metal frames or custom plating requirements like Tin/Lead or PbFree finishes.

Selection Notes

Select this component when designing circuits requiring fast switching speeds and robust pulsed current handling capabilities. Ensure the application operates within the specified 30 V drain-source and 12 V gate-source limits. Consider the thermal management requirements given the wide operating junction temperature range up to +150 °C. Verify that the drive circuitry can supply the necessary gate charge efficiently to maintain the low turn-on and turn-off times.

Part Context

This part is a bare die semiconductor device manufactured by Central Semiconductor Corp. Unlike packaged transistors, it requires integration into custom substrates or hybrid circuits. The die dimensions are 37.8 x 26 mils with a thickness of 5.5 mils. It utilizes aluminum top-side metalization and a titanium/nickel/silver back-side metalization scheme for thermal and electrical connectivity.