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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：70mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3348-TL-W is a single-channel P-Channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 3 A. Its typical on-resistance is 215 mOhms, with a gate-source threshold voltage of 1.4 V. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1 W.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Enhancement mode operation optimized for low-voltage drive compatibility
- Surface-mount construction in a compact SOT-23-3 package
Applications
- Low-voltage power management circuits
- Battery protection systems
- Load switching applications
Procurement Notes
Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or secondary market channels. Ensure compliance with RoHS and REACH requirements as specified in the official datasheet. Validate that the SOT-23-3 package footprint matches your PCB layout constraints. Check for lead-free soldering qualification if required by your manufacturing process.
Selection Notes
Select this component when a P-Channel MOSFET with a 12 V rating and 3 A current capacity is required. Consider the 215 mOhm on-resistance for thermal management in low-power designs. The SOT-23-3 package limits power dissipation to 1 W, so ensure adequate thermal relief. Verify that the 1.4 V threshold voltage aligns with your logic level drive signals.
Part Context
This part belongs to the CPH3348 series of P-Channel MOSFETs from onsemi. These devices are designed for general-purpose switching applications requiring low gate charge and fast switching speeds. The series typically offers options for various voltage ratings and current capacities within the same package family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support or authorized distributors for verified cross-reference recommendations.
