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The CPH6612-TL-E is an N-channel enhancement mode MOSFET array from onsemi, housed in a surface-mount CPH package. It integrates two independent N-channel MOSFETs within a single 6-pin component. The device supports low-voltage drive with a maximum gate-source voltage of ±20 V and a typical gate charge of 20 nC at 10 V. Key electrical ratings include a maximum drain-source voltage of 60 V, a continuous drain current of 6 A, and a maximum on-resistance of 65 mΩ. It features a power dissipation capacity of 1.6 W and operates up to a junction temperature of +150 °C. The physical dimensions are 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height.
Verify the manufacturer part number CPH6612-TL-E against official onsemi documentation to ensure authenticity. Confirm that the received components match the specified CPH package type and pin configuration. Check for any specific handling requirements related to electrostatic discharge during storage and assembly. Ensure compatibility with the intended PCB footprint before finalizing procurement orders.
Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. The 60 V rating and 6 A current capability suit moderate power switching tasks. Consider the 65 mΩ on-resistance for efficiency requirements. The 2.5V drive series characteristic makes it suitable for logic-level control interfaces. Verify thermal management needs given the 1.6 W power dissipation limit in the small CPH package.
This part belongs to onsemi's CPH series of surface-mount transistors. The CPH package provides a compact form factor suitable for high-density PCB layouts. As a dual MOSFET array, it simplifies circuit design by replacing discrete components. The product line focuses on intelligent power and sensing technologies, offering reliable performance for modern electronic systems.
No public confirmed substitute part numbers are available in the provided data.