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Product Detailed Parameters
- Description：MOSFET N-CH 25V 5A 6SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：24mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-SON
- Package / Case：6-SMD, Flat Leads
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Replacement Considerations
The TXS0101QDCKRQ1 is a voltage translator, not a MOSFET. The CSD17301Q5A is an N-channel MOSFET with different specifications (30V, 28A). No verified public substitute part numbers are available for the CSD16301Q2.
