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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A/56A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 17A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：955 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD17304Q3 is a 30-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a PICOSTAR-3 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 2.5 A, and a maximum on-resistance of 160 mOhms at a gate-source voltage of 4.5 V. The device operates with a gate-source voltage range of -8 V to 8 V and has a threshold voltage of 1 V. Thermal performance includes a power dissipation of 500 mW and an operating temperature range from -55°C to +150°C.
Feature Summary
- NexFET technology enables high-speed switching capabilities for efficient power management.
- Low on-resistance minimizes conduction losses in compact circuit designs.
- Enhancement-mode operation ensures reliable control through standard logic-level gate signals.
Applications
- DC-DC converter circuits
- Power management integrated circuits (PMICs)
- Load switch applications
Procurement Notes
Verify the specific ordering suffix to confirm the exact packaging configuration, such as tape and reel or cut tape, as this affects handling procedures. Ensure compliance with RoHS directives and check for any recent product change notices that may impact long-term availability or material composition before finalizing procurement plans.
Selection Notes
Select this component when a low-voltage, single-channel N-channel MOSFET is required for space-constrained designs. The PICOSTAR-3 package offers a small footprint suitable for high-density layouts. Consider the 30 V rating and 2.5 A current capability against the specific load requirements and thermal constraints of the target application environment.
Part Context
This part belongs to the CSD1730x series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for general-purpose power switching applications requiring high efficiency and fast switching speeds. The series provides various options for current and resistance ratings within the same 30 V voltage class.
Replacement Considerations
Compatible substitutes include other 30 V N-channel MOSFETs in similar packages, such as the CSD17302Q5A or CSD17305Q5A, provided their current and resistance specifications meet the design requirements. Verify pinout compatibility and thermal characteristics before substitution.
