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Product Detailed Parameters
- Description：MOSFET N-CH 40V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1656 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 77W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18504Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP package for surface mount applications. The device features a drain-source voltage of 40 V and supports a continuous drain current of 75 A. Its on-resistance is specified at 6.6 mOhms, with a gate charge of 16 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 77 W.
Feature Summary
- NexFET technology enables low on-resistance and fast switching performance.
- VSONP-8 package provides high thermal efficiency and compact footprint.
- Enhancement mode operation ensures reliable control.
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific ordering suffix to confirm the exact packaging configuration, such as reel or cut tape, as indicated in official documentation. Ensure that the component meets all relevant RoHS and REACH compliance requirements before integration into the design. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability status.
Selection Notes
Select this component when a 40 V N-channel MOSFET with low on-resistance is required for space-constrained designs. The VSONP-8 package offers a balance between thermal performance and board area efficiency. Consider the 75 A current rating and 6.6 mOhm resistance for applications requiring efficient power handling in compact form factors.
Part Context
This part belongs to the CSD18504Q5A series of NexFET power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion applications. The series leverages advanced silicon technology to deliver superior performance in terms of conduction losses and switching speeds compared to standard MOSFETs.
Replacement Considerations
Consult official datasheets for direct pin-compatible alternatives within the same series. Verify electrical parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional equivalence in existing circuit designs.
