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Product Detailed Parameters
- Description：MOSFET N-CH 60V 17A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.9mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2750 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 116W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18533Q5AT is a single N-channel Power MOSFET from the NexFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP (5x6) surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 17 A at ambient temperature or 100 A at case temperature. Its maximum on-resistance is 5.9 mΩ at 10 V gate drive. The component operates within a junction temperature range of -55°C to +150°C, with power dissipation rated at 3.2 W at ambient and 116 W at case conditions.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance optimized for minimal conduction losses
- Enhanced thermal performance via exposed pad package design
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to confirm tape and reel specifications. Ensure compatibility with standard surface mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.
Selection Notes
Select this component for designs requiring low Rds(on) in compact footprints. Evaluate thermal management requirements based on the 8-VSONP package characteristics. Compare gate charge parameters against driver capabilities to ensure efficient switching performance in high-frequency applications.
Part Context
This part belongs to the CSD18533 series of NexFET power MOSFETs. It represents a single-chip solution intended for space-constrained power electronics. The Q5A suffix indicates specific packaging and handling attributes defined by the manufacturer for automated assembly lines.
Replacement Considerations
Consult official substitution guides for electrically equivalent alternatives. Verify pinout compatibility and thermal resistance values when considering cross-manufacturer replacements.
