CSD25301W1015

Overview

The CSD25301W1015 is a P-Channel NexFET Power MOSFET designed for ultra-low on-resistance and gate charge in a small footprint. It features a drain-to-source voltage of -20 V, continuous drain current of -2.2 A at 25°C, and an on-state resistance as low as 62 mΩ at VGS = -4.5V. The device utilizes a DSBGA-6 wafer-level package with dimensions of 1.0 x 1.5 mm and a maximum height of 0.62 mm. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

• Ultra-low gate charge (Qg) and gate-drain charge (Qgd) for efficient switching
• Small outline CSP 1 × 1.5 mm wafer level package
• Low profile construction with 0.62mm maximum height

Applications

• Battery management systems
• Load switch applications
• Battery protection circuits

Procurement Notes

Verify the specific ordering suffix matches the required media quantity and reel specifications. Confirm RoHS compliance status and halogen-free designation requirements against project standards. Ensure thermal design accounts for the specified RqJA values based on copper area constraints.

Selection Notes

Select this component when minimizing board space is critical due to its 1x1.5 mm footprint. Evaluate thermal performance requirements against the provided RqJA limits for minimum versus full copper pad areas. Consider the low gate charge characteristics for high-frequency switching efficiency needs.

Part Context

This part belongs to Texas Instruments' NexFET family of power MOSFETs. It is categorized under discrete semiconductor devices specifically engineered for power management and switching applications requiring compact form factors and high thermal efficiency.

Replacement Considerations

CSD25211W1015