CSD75207W15

Overview

The CSD75207W15 is a dual-channel P-Channel Power MOSFET from Texas Instruments, part of the NexFET family. It is housed in a compact 9DSBGA package designed for surface-mount applications. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 3.9 A. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 28 mΩ at Vgs = -4.5 V and 45 mΩ at Vgs = -2.5 V. The gate charge (Qg) is typically 6 nC at Vgs = -4.5 V, facilitating efficient switching performance.

Feature Summary

• Dual-channel configuration integrates two independent P-Channel MOSFETs into a single compact footprint to reduce board space.
• NexFET technology provides optimized low on-resistance and fast switching speeds for improved power efficiency.
• Enhanced thermal performance through a leadless DSBGA package design that maximizes heat dissipation capabilities.

Applications

• Power management circuits in portable consumer electronics
• Load switching applications in mobile devices
• Battery protection and power distribution systems

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status and packaging quantity requirements directly with authorized distributors to align with production needs.

Selection Notes

Select this component when a dual P-Channel solution is required in a minimal footprint. Evaluate the Rds(on) values at the intended gate drive voltage to ensure adequate conduction losses. Consider the thermal resistance of the 9DSBGA package relative to the expected power dissipation in the target application environment.

Part Context

This device belongs to the CSD7520x series of NexFET power MOSFETs. It serves as a high-density alternative to discrete single-channel solutions, offering integrated functionality for dual-load control. The series is engineered for modern electronic designs prioritizing size reduction and energy efficiency.

Replacement Considerations

Consult the official Texas Instruments selection guide for verified pin-compatible or functionally equivalent alternatives within the NexFET portfolio. Cross-reference package dimensions and electrical parameters to ensure seamless integration without circuit redesign.

FAQ

What is the maximum drain-source voltage rating?

The CSD75207W15 has a maximum drain-source voltage (Vds) rating of 30 V.

How many channels are integrated in this package?

The device contains two independent P-Channel MOSFET channels within a single 9DSBGA package.

What is the typical gate charge value?

The typical total gate charge (Qg) is 6 nC when measured at a gate-source voltage of -4.5 V.