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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 20A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Rds On (Max) @ Id, Vgs：9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id：1.9V @ 250µA, 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8nC @ 45V, 7.4nC @ 45V
- Input Capacitance (Ciss) (Max) @ Vds：494pF @ 12.5V, 970pF @ 12.5V
- Power - Max：6W
- Operating Temperature：-55°C ~ 125°C
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-VSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD86336Q3DT is an N-channel enhancement mode MOSFET module from the NexFET series by Texas Instruments. It features a 20 V drain-source voltage (Vds) rating and supports a continuous drain current (Id) of 60 A. The device utilizes a surface-mount SON package with 8 pins. Key electrical parameters include a maximum on-resistance (Rds(on)) ranging from 3.3 mΩ to 8.8 mΩ, a gate threshold voltage (Vgs(th)) between 0.9 V and 2.1 V, and a maximum power dissipation (Pd) of 6 W. The operating temperature range extends from -55°C to +150°C, with a maximum gate-source voltage of ±8 V.
Feature Summary
- NexFET technology for enhanced efficiency
- Low on-resistance for reduced conduction losses
- High thermal stability up to 150°C
Applications
- DC-DC converter modules
- Power management integrated circuits
- Battery protection circuits
Procurement Notes
Verify the specific suffix 'DT' against official Texas Instruments documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard surface-mount assembly processes. Cross-reference the exact part number in the manufacturer's latest datasheet to validate pinout configuration and thermal pad requirements before procurement.
Selection Notes
Select this component for applications requiring low voltage operation and high current handling capabilities. The 20 V rating suits 12 V systems. Evaluate the Rds(on) values against thermal constraints to ensure the 6 W power dissipation limit is not exceeded under peak load conditions. Confirm that the gate drive voltage aligns with the specified threshold range for optimal switching performance.
Part Context
This part belongs to the CSD86336Q3D family of NexFET power stages. These modules integrate multiple MOSFETs to reduce footprint and improve thermal performance compared to discrete solutions. The family is designed for high-density power conversion applications where space and efficiency are critical constraints.
Replacement Considerations
The CSD86330Q3D is a related variant within the same series. Verify if the specific Rds(on) or current ratings differ sufficiently to require redesign. Check pin-to-pin compatibility and thermal characteristics before substitution.
