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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 27A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：27A
- Rds On (Max) @ Id, Vgs：33mOhm @ 7A , 8V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1250pF @ 15V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-VSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87312Q3E is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and is housed in a QFN-6 package measuring 2x2mm. The device offers a maximum on-resistance of 4.5mΩ at a gate drive of 4.5V, ensuring low conduction losses. It supports a continuous drain current of up to 30A and operates within an extended junction temperature range from -55°C to +150°C. This component is designed for high-efficiency power management applications requiring compact footprints.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for minimal on-resistance to enhance power efficiency
- Extended thermal operating range suitable for demanding environments
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific suffix 'Q3E' against the manufacturer's official datasheet to confirm pinout compatibility and electrical specifications. Ensure that the ordering information matches the exact package type and tape-and-reel requirements specified in the latest production data to avoid integration errors during assembly.
Selection Notes
Select this component when system design requires a dual N-channel solution with a 30V voltage rating and a footprint smaller than standard SOIC packages. Evaluate the 4.5mΩ Rds(on) specification against the target load current to ensure thermal performance remains within acceptable limits under continuous operation conditions.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. The series focuses on combining low on-resistance with small physical dimensions. The CSD87312 variant specifically addresses the need for dual-channel control in space-constrained power supply designs without sacrificing switching performance or thermal stability.
Replacement Considerations
Consult the official cross-reference list for verified substitutes. Ensure any alternative maintains the same 30V rating, QFN-6 package dimensions, and equivalent Rds(on) characteristics to preserve circuit functionality.
