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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：4290pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-WSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87313DMS is a dual N-channel NexFET power MOSFET in an 8-WSON (3.3x3.3mm) package. It features a 30V drain-source voltage and 17A continuous drain current. The on-resistance is 5.5mΩ at VGS=4.5V. Gate-source voltage ranges from -10V to +10V, with a threshold voltage of 600mV. Total gate charge is 28nC. Operating temperature spans -55°C to +150°C. Power dissipation is 2.7W. Rise time is 27ns and fall time is 13ns.
Feature Summary
- Dual common-drain configuration for space-constrained designs
- Optimized for 5V gate drive applications
- Low thermal resistance structure
- Avalanche rated capability
Applications
- USB Type-C and Power Delivery bus protection
- Battery protection circuits
- Load switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the WSON-8 package dimensions with PCB footprint libraries to prevent mechanical interference during surface-mount placement.
Selection Notes
Select this component when low on-resistance is critical for minimizing conduction losses in dual-channel configurations. Verify that the 30V rating exceeds the maximum system voltage including transients. Confirm that the 28nC gate charge aligns with the driving circuit's current capabilities to ensure acceptable switching speeds without excessive driver stress.
Part Context
This device belongs to Texas Instruments' NexFET family, designed for high-efficiency power management. The WSON-8 package provides a compact solution compared to traditional SOIC or QFN alternatives. It serves as a specialized alternative for applications requiring dual switches in a minimal footprint, such as portable electronics and industrial control systems.
Replacement Considerations
Direct replacements include the CSD87312Q3E, which offers similar 30V specifications but different electrical characteristics. Verify pin-to-pin compatibility and thermal performance before substitution. Ensure the replacement part meets the same avalanche rating and gate drive optimization requirements.
