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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 15A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：662pF @ 15V
- Power - Max：6W
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-VSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87333Q3DT is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS rating of 30 V and a continuous drain current (ID) of 15 A. The device offers a maximum RDS(on) of 14.3 mΩ at VGS = 10 V. It utilizes a VSON-8 surface-mount package with a thermal pad for efficient heat dissipation. The component operates within a junction temperature range of -55°C to +150°C, with a power dissipation capability of 1.5 W. Key switching parameters include a gate charge (Qg) of 3.5 nC, turn-on delay time of 2.9 ns, rise time of 3.9 ns, turn-off delay time of 2.2 ns, and fall time of 2.2 ns.
Feature Summary
- Dual N-channel configuration optimized for synchronous buck converter applications
- Low on-resistance design supporting high duty cycle operation
- Enhanced thermal performance via exposed pad VSON-8 package
Applications
- Synchronous buck converters
- High duty cycle DC/DC conversion circuits
- Point-of-load voltage regulation modules
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to confirm the exact tape-and-reel quantity and packaging variant. Ensure the component meets RoHS and REACH compliance requirements as specified in the manufacturer's datasheet before finalizing procurement specifications.
Selection Notes
Select this component when a 30-V, 15-A dual N-channel MOSFET is required for synchronous rectification. The low gate charge and fast switching times make it suitable for high-frequency applications. Verify that the PCB layout supports the VSON-8 package dimensions and thermal pad connection for optimal heat transfer.
Part Context
This part belongs to the CSD8733xQ3D series of NexFET power MOSFETs from Texas Instruments. The series is designed for high-efficiency power management solutions. The 'Q' designation typically indicates automotive qualification standards, while 'D' refers to the VSON-8 package type.
Replacement Considerations
Cross-reference with other CSD8733xQ3D variants or similar 30-V dual N-channel MOSFETs from Texas Instruments. Verify pinout compatibility and electrical parameter equivalence, particularly RDS(on) and Qg, before substituting.
