CSD87334Q3DT

Overview

The CSD87334Q3DT is a NexFET power block from Texas Instruments, featuring an integrated P-channel MOSFET and dual N-channel MOSFETs in an 8-pin VSON package. It supports a maximum drain-source voltage of 30 V and delivers up to 60 A continuous current with an on-resistance of 8.3 mΩ. The device operates within a temperature range of -55 °C to +150 °C, dissipating up to 6 W of power. Key electrical parameters include a gate threshold voltage between 0.75 V and 1.2 V, a maximum gate-source voltage of -8 V/+10 V, and typical gate charge of 10.5 nC.

Feature Summary

• Integrated half-bridge power block combining one P-channel and two N-channel enhancement-mode MOSFETs for synchronous buck applications.
• Optimized design for high-duty cycle operation, supporting input voltages up to 24 V.
• Enhanced thermal performance through a compact 8-VSON surface-mount package.

Applications

• Synchronous buck converters
• Boost converter topologies
• High-efficiency DC-DC power regulation

Procurement Notes

Verify the specific suffix 'DT' corresponds to the tape-and-reel packaging configuration required for automated assembly processes. Confirm that the component meets RoHS3 compliance standards and check the MSL rating for moisture sensitivity handling during storage and soldering. Ensure the ordering part number matches the exact NexFET power block variant to avoid pinout mismatches.

Selection Notes

Select this component when designing synchronous rectification circuits requiring high current density and minimal board space. The integrated P-channel switch simplifies driver requirements compared to discrete solutions. Evaluate the 8.3 mΩ on-resistance against thermal constraints to ensure the 6 W power dissipation limit is not exceeded under peak load conditions.

Part Context

This device belongs to the NexFET family, which integrates power transistors into single packages to reduce parasitic inductance and improve switching speeds. The CSD87334Q3DT specifically targets applications needing robust high-current handling in a small footprint, leveraging Texas Instruments' silicon carbide or advanced silicon process technologies for efficiency.

Replacement Considerations

• CSD87335Q3DT

FAQ

What is the internal transistor configuration of the CSD87334Q3DT?

It contains one P-channel MOSFET and two N-channel MOSFETs configured as a half-bridge power block.

What is the maximum input voltage supported by this power block?

The device is optimized for applications with input voltages up to 24 V.