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The CSD87381P is a dual N-channel NexFET Power Block II MOSFET manufactured by Texas Instruments. It integrates two enhancement-mode transistors in a PTAB-5 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 8 A. Typical on-resistance (Rds(on)) values are 16.3 mΩ and 7.6 mΩ. Gate-source voltage limits range from -8 V to 8 V, with threshold voltages between 1 V and 1.1 V. Total gate charge (Qg) is specified at 3.9 nC and 8.9 nC. Switching characteristics include fall times of 3 ns and 2.9 ns, and rise times of 19.3 ns and 16.3 ns. Forward transconductance ranges from 40 S to 89 S. The component supports a power dissipation of 4 W and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the PTAB-5 package variant matches the required footprint for PCB layout. Cross-reference the RoHS compliance status directly with the product documentation before procurement.
Select this component when a 30 V rating and approximately 8 A continuous current capability are required for synchronous rectification. Evaluate the Rds(on) trade-offs against thermal management constraints. Ensure the gate drive circuitry can support the specified Vgs limits and Qg requirements for optimal switching efficiency.
This part belongs to the CSD87381 series of NexFET Power Blocks. It shares the PTAB-5 package form factor with other devices in the family but differs in electrical ratings such as current handling and on-resistance compared to higher-current variants like the CSD87384M.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pin compatibility and electrical parameters if considering alternative manufacturers or different TI series members.