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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 25A 5PTAB
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A
- Rds On (Max) @ Id, Vgs：9.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：736pF @ 15V
- Power - Max：6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：5-LGA
- Supplier Device Package：5-PTAB (5x3.5)
- Grade：-
- Qualification：-
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Overview
The CSD87588NT is a dual N-channel NexFET Power Block II MOSFET manufactured by Texas Instruments. It features a PTAB-5 surface-mount package with dimensions of 5x3.5 mm. The device supports a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 25 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 9.6 mΩ at 15 A and 10 V, and a gate charge (Qg) of 4.1 nC at 4.5 V. The input capacitance (Ciss) is 736 pF at 15 V. Operating temperatures range from -55°C to +150°C, with a maximum power dissipation of 6 W.
Feature Summary
- Integrated dual N-channel configuration within a compact Power Block II footprint for high-density designs.
- Optimized low on-resistance characteristics to minimize conduction losses in synchronous buck applications.
- Fast switching performance supported by low gate charge and optimized internal parasitic capacitances.
Applications
- Synchronous buck converters
- Point-of-load (POL) regulation modules
- DC-DC converter stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure that the component matches the required RoHS compliance status and lead-free finish as defined in the latest product documentation before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a 30 V rating and up to 25 A continuous current capability. The PTAB-5 package is suitable for space-constrained PCB layouts. Evaluate thermal management requirements based on the 6 W power dissipation limit and ensure the driving circuit can handle the specified gate threshold and charge requirements for efficient switching.
Part Context
This part belongs to the Texas Instruments NexFET™ Power Block II series, designed specifically for synchronous rectification in DC-DC conversion circuits. The CSD87588N variant represents the standard commercial grade packaging, while the NT suffix typically denotes specific reel or cut-tape configurations available through distributors.
Replacement Considerations
Consult the official Texas Instruments cross-reference guide for verified substitutes. Potential alternatives may include other devices within the CSD87588N family or comparable NexFET Power Block II parts with matching 30 V/25 A ratings and PTAB-5 footprints.
FAQ
What is the maximum operating junction temperature for the CSD87588NT?
The maximum operating temperature is +150°C.
Is the CSD87588NT a single or dual channel device?
It is a dual N-channel MOSFET configured as a half-bridge pair.
What is the typical gate threshold voltage (Vgs(th))?
The gate threshold voltage is specified at 1.9 V.
