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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 15A 8SOIC
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 30V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The CSD88537ND is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 15 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 28 mΩ at Vgs = 10 V and Id = 5 A. Gate charge (Qg) is typically 9.4 nC at 10 V, with an input capacitance (Ciss) of 741 pF at 30 V. The threshold voltage (Vgs(th)) is 3.6 V max at 250 µA. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC package.
Feature Summary
- Dual N-Channel Configuration
- NexFET Technology
- Surface Mount Package
Applications
- Power Management Systems
- DC-DC Converters
- Motor Control Applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Cross-reference the full part number with authorized distributors to validate current availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when a compact dual N-channel solution is required for 60 V applications. Ensure the thermal management design supports the 2.1 W power dissipation rating in the 8-SOIC package. Verify that the gate drive voltage meets the 10 V requirement for optimal Rds(on) performance. Check pin compatibility if replacing existing designs using similar SOIC footprints.
Part Context
The CSD88537ND belongs to Texas Instruments' NexFET family of power MOSFETs. It is functionally related to other devices in the CSD1853x series, such as the CSD18532NQ5B and CSD18537NQ5A, which share similar voltage ratings and technology nodes. These components are designed for high-efficiency power switching applications requiring low conduction losses.
Replacement Considerations
Potential substitutes include CSD18532NQ5B and CSD18537NQ5A from Texas Instruments. Verify pinout compatibility and electrical parameter margins before substitution.
