CY14V104NA-BA25XIT

Memory IC Overview

The CY14V104NA-BA25XIT is a non-volatile static random-access memory (nvSRAM) device manufactured by Infineon Technologies. It features a storage density of 1 Mbit, organized as 256K words by 16 bits. The component supports parallel interface operations with an access time of 25 ns. It operates within a supply voltage range of 2.7 V to 3.6 V and is qualified for industrial temperature conditions spanning from -40 °C to +85 °C. The device is housed in a TSOP-II package.

Memory IC Feature Summary

• Provides non-volatile data retention without requiring external backup power sources.
• Enables byte-level write capabilities similar to standard SRAM operation.
• Integrates automatic battery switchover mechanisms to preserve data during power transitions.

Memory IC Applications

• Industrial control systems requiring persistent configuration storage
• Automotive electronics needing reliable data logging
• Network infrastructure equipment demanding high-speed non-volatile memory

Memory IC Procurement Notes

Verify the specific suffix 'XIT' corresponds to the tape-and-reel packaging format when ordering. Confirm that the 25 ns speed grade matches the system timing requirements. Ensure the industrial temperature rating aligns with the operational environment specifications. Cross-reference the manufacturer part number against official Infineon documentation to avoid confusion with similar nvSRAM variants.

Memory IC Selection Notes

Select this component when a design requires SRAM-like speed combined with non-volatility. It serves as a drop-in replacement for volatile SRAM where data loss during power cycles is unacceptable. Consider the 256K x 16 organization for applications handling 16-bit data structures. Evaluate the parallel interface constraints against available microcontroller or FPGA resources.

Memory IC Part Context

This part belongs to the CY14V series of nvSRAM products from Infineon. It is designed to bridge the gap between fast volatile memory and slower non-volatile technologies like Flash or EEPROM. The series emphasizes ease of use by eliminating complex write cycles associated with other non-volatile memories.

Memory IC Replacement Considerations

Check for CY14V104NA-BA25XI if tray packaging is preferred over reel. Verify compatibility with CY14B104NA family members for potential future sourcing flexibility, noting differences in manufacturing nodes or feature sets.