CY62147GE-45ZSXI

Memory IC Overview

The CY62147GE-45ZSXI is a 4-Mbit (256K words × 16-bit) asynchronous static random access memory manufactured by Infineon Technologies. It operates within a voltage range of 4.5 V to 5.5 V and features a 45 ns access time. The device utilizes a 44-pin TSOP II surface-mount package and supports industrial temperature ranges from -40 °C to +85 °C. Key specifications include a maximum standby current of 8.7 µA and an operating supply current of up to 20 mA.

Memory IC Feature Summary

• Integrated Error-Correcting Code (ECC) with a dedicated ERR pin for single-bit error detection and correction during read cycles.
• Ultra-low standby power consumption achieved through automatic power-down mechanisms when chip enables are inactive.
• TTL-compatible inputs and outputs ensuring direct interfacing compatibility with standard logic families.

Memory IC Applications

• Industrial control systems requiring reliable volatile data storage
• Battery-backed memory architectures utilizing low-voltage retention capabilities
• Embedded applications needing high-speed asynchronous data buffering

Memory IC Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type, speed grade, and voltage range compatibility. Confirm that the ERR pin functionality aligns with system requirements, as this variant includes the error indication feature. Ensure environmental compliance standards match project specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 5V logic interface is required alongside embedded ECC protection for data integrity. The 44-pin TSOP II package suits designs prioritizing space efficiency over higher-density BGA options. Consider alternative variants if lower voltage operation or dual chip enable configurations are necessary for the target application architecture.

Memory IC Part Context

This part belongs to the MoBL SRAM family, designed for high performance and ultra-low power consumption. It represents a transition from Cypress Semiconductor products now managed under Infineon Technologies. The device integrates advanced 65-nm process technology to deliver reliability in demanding industrial environments while maintaining compact physical dimensions.

Memory IC Replacement Considerations

Direct replacements include CY62147G-45ZSXI, which lacks the ERR pin but shares identical electrical characteristics and pinout assignments excluding the error signal line. Verify functional equivalence regarding error handling logic before substituting components in existing designs.

Memory IC FAQ

What is the function of the ERR pin on the CY62147GE?

The ERR pin signals a single-bit error detection and correction event during a read cycle by asserting HIGH.

How does the Byte Power Down feature operate?

When both Byte High Enable (BHE) and Byte Low Enable (BLE) are disabled, the device switches to standby mode regardless of chip enable states.