CY7C1513KV18-200BZXI

Memory IC Overview

The CY7C1513KV18-200BZXI is a 72-Mbit QDR II SRAM with a 4M x 18 organization. It operates at a maximum frequency of 200 MHz within an industrial temperature range of -40°C to 85°C. The device uses a 165-ball FBGA package (13x15 mm) and supports 1.7 V to 1.9 V core voltage.

Memory IC Feature Summary

• Features separate independent read and write data ports for concurrent transactions without bus turnaround.
• Employs a four-word burst architecture to reduce address bus frequency requirements.
• Includes echo clocks (CQ, CQ) to simplify data capture in high-speed systems.
• Supports byte-level write operations via dedicated select inputs.

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix 'ZXI' against official Infineon documentation to confirm lead-free status and RoHS compliance. Confirm that the 200 MHz speed grade matches system timing requirements. Ensure the industrial temperature rating (-40°C to 85°C) aligns with environmental specifications.

Memory IC Selection Notes

Select this component for applications requiring simultaneous read and write access. The 4M x 18 configuration provides a balance between density and interface width. Verify compatibility with HSTL I/O standards and ensure proper impedance matching using the ZQ pin.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR II family, designed for synchronous pipelined burst operations. It utilizes a dual-clock input scheme (K, K) for precise DDR timing on both ports, maximizing throughput while minimizing clock skew through dedicated output clocks.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.