CY7C25632KV18-400BZC

Memory IC Overview

The CY7C25632KV18-400BZC is a 72-Mbit QDR-II SRAM featuring a 4-word burst architecture with 2.5-cycle read latency. It operates at a maximum clock frequency of 400 MHz and supports a data width of x18. The device utilizes a 1.7 V to 1.9 V supply voltage range and functions within a commercial temperature range of 0°C to 70°C. It is housed in a 165-ball FBGA package.

Memory IC Feature Summary

• Supports four-word burst access for efficient sequential data retrieval
• Provides 2.5-cycle read latency for high-speed parallel interface operations
• Integrates on-die termination to improve signal integrity

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Data routing and switching applications

Memory IC Procurement Notes

Verify the specific suffix codes against official Infineon or Cypress documentation to confirm exact speed grades, package variations, and environmental compliance status. Ensure compatibility with existing system power supplies and thermal management requirements before procurement.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with a 18-bit data width is required. The 400 MHz speed grade suits designs needing moderate throughput. Consider the FBGA package constraints and 1.8V power domain during board layout and power rail planning.

Memory IC Part Context

This part belongs to the QDR-II SRAM family developed by Cypress Semiconductor, now part of Infineon Technologies. These devices are engineered for synchronous memory applications requiring deterministic access times and high bandwidth without complex controller logic.

Memory IC Replacement Considerations

Check for CY7C25632KV18-450BZXC or CY7C25632KV18-500BZXC for higher speed variants. Verify pinout and electrical specifications match exactly before substituting.