CY7C2565KV18-500BZXC

Memory IC Overview

The CY7C2565KV18-500BZXC is a 72-Mbit QDR II+ Synchronous Pipelined SRAM with a 2M x 36 organization. It supports a maximum operating frequency of 500 MHz, providing high bandwidth through separate independent read and write data ports that allow concurrent transactions. The device features a 4-word burst architecture with 2.5 cycle read latency when the DOFF pin is asserted HIGH. It operates with a core voltage of 1.8V ± 0.1V and I/O voltages ranging from 1.4V to VDD. The component is housed in a 165-ball FBGA package measuring 13 x 15 x 1.4 mm.

Memory IC Feature Summary

• Supports concurrent read and write operations via separate independent data ports, eliminating bus turnaround requirements.
• Integrates On-Die Termination (ODT) for data inputs, byte write selects, and input clocks to reduce external components.
• Includes echo clocks (CQ and CQ) and a valid data indicator (QVLD) to simplify data capture in high-speed systems.
• Utilizes a phase-locked loop (PLL) for accurate data placement and supports programmable output impedance matching.

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency memory access
• Telecommunications infrastructure utilizing synchronous pipelined architectures
• Industrial control systems demanding full data coherency and concurrent port operations

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency, as the family includes variants up to 550 MHz. Confirm the package type corresponds to the 165-ball FBGA form factor. Ensure the supply voltage requirements align with the specified 1.8V core and 1.4V to 1.9V I/O ranges. Check for RoHS compliance status if environmental regulations apply to the target assembly process.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with a 36-bit data width is required for parallel interface applications. Choose this part over standard SRAMs when simultaneous read and write throughput is necessary without bus contention. Consider the QDR II+ architecture for designs needing echo clocks and on-die termination to simplify PCB routing and signal integrity management at frequencies up to 500 MHz.

Memory IC Part Context

This device belongs to the Cypress/Infineon QDR II+ SRAM family, which extends the QDR II specification by adding On-Die Termination capabilities. The family shares a common 165-ball FBGA footprint and functional architecture across various densities and widths. The CY7C2565KV18 specifically addresses the 2M x 36 configuration within this series, offering a balance between density and interface width for high-performance memory subsystems.

Memory IC Replacement Considerations

The CY7C2565KV18-550BZXC serves as a higher-speed variant within the same package and functional family. Verify compatibility if system timing margins require the 550 MHz rated version. No direct cross-manufacturer equivalents are documented in the provided source material.

Memory IC FAQ

How does the DOFF pin affect the read latency of the CY7C2565KV18?

When the DOFF pin is asserted HIGH, the device operates with a 2.5 cycle read latency using the PLL. When DOFF is LOW or connected to ground, the PLL is disabled, and the device behaves like a QDR I device with a 1 cycle read latency but longer access times.

What is the function of the ZQ pin on this SRAM?

The ZQ pin is used for output impedance matching. An external resistor (RQ) connected between ZQ and ground tunes the device outputs to the system data bus impedance. The output impedance is set to 0.2 times the value of RQ.