DGTD65T40S1PT

DGTD65T40S1PT

  • Description:IGBT FIELD STOP 650V 80A TO-247
  • Series:-

SKU:bad669a7ee33 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT FIELD STOP 650V 80A TO-247
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):160 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
  • Power - Max:341 W
  • Switching Energy:1.15mJ (on), 350µJ (off)
  • Input Type:Standard
  • Gate Charge:219 nC
  • Td (on/off) @ 25°C:58ns/245ns
  • Test Condition:400V, 40A, 7.9Ohm, 15V
  • Reverse Recovery Time (trr):145 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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DGTD65T40S1PT

Overview

The DGTD65T40S1PT is a 650V Field Stop IGBT manufactured by Diodes Incorporated in a TO-247 package. It utilizes advanced field stop trench technology to deliver high switching performance and low power loss. The device features a collector-emitter saturation voltage of 1.95V at 40A, a maximum junction temperature of 175°C, and a turn-off energy of 0.3mJ at 25°C. It supports a continuous collector current of 80A at 25°C and includes an integrated anti-parallel diode with a reverse recovery time of 80ns.

Feature Summary

  • Advanced field stop trench IGBT technology for high quality and switching performance
  • High input impedance combined with low power loss characteristics
  • Lead-free finish compliant with RoHS directives and free from halogens and antimony

Applications

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Solar inverters
  • Induction Heating (IH) cookers

Procurement Notes

Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm that the recommended replacement component meets all original electrical requirements and physical footprint specifications. Ensure compliance with environmental regulations and sourcing channels through authorized distributors only.

Selection Notes

Select the replacement model based on matching voltage ratings, current capabilities, and thermal resistance values. Evaluate the switching energy parameters to ensure compatibility with existing gate drive circuits and cooling systems. Verify that the alternative component maintains the required safety certifications and packaging dimensions for seamless integration.

Part Context

This component belongs to the DGTD series of high-voltage IGBTs designed for industrial power conversion applications. It represents a generation of devices optimized for efficiency in medium-power switching scenarios. The product line focuses on reducing conduction and switching losses to improve overall system reliability and thermal management.

Replacement Considerations

Use DGTD65T40S2PT as the confirmed public substitute.

FAQ

What is the maximum short circuit withstand time for this IGBT?

The device can withstand a short circuit for up to 5 microseconds under specified conditions.

Does the DGTD65T40S1PT include an integrated freewheeling diode?

Yes, the datasheet specifies electrical characteristics for the integrated diode, including forward voltage and reverse recovery time.

What is the typical reverse recovery time of the integrated diode?

The typical reverse recovery time is 80 nanoseconds when measured at a current change rate of 1000A/µs.

DGTD65T40S1PTDGTD65T40S1PT

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