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The DGTD65T40S1PT is a 650V Field Stop IGBT manufactured by Diodes Incorporated in a TO-247 package. It utilizes advanced field stop trench technology to deliver high switching performance and low power loss. The device features a collector-emitter saturation voltage of 1.95V at 40A, a maximum junction temperature of 175°C, and a turn-off energy of 0.3mJ at 25°C. It supports a continuous collector current of 80A at 25°C and includes an integrated anti-parallel diode with a reverse recovery time of 80ns.
Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm that the recommended replacement component meets all original electrical requirements and physical footprint specifications. Ensure compliance with environmental regulations and sourcing channels through authorized distributors only.
Select the replacement model based on matching voltage ratings, current capabilities, and thermal resistance values. Evaluate the switching energy parameters to ensure compatibility with existing gate drive circuits and cooling systems. Verify that the alternative component maintains the required safety certifications and packaging dimensions for seamless integration.
This component belongs to the DGTD series of high-voltage IGBTs designed for industrial power conversion applications. It represents a generation of devices optimized for efficiency in medium-power switching scenarios. The product line focuses on reducing conduction and switching losses to improve overall system reliability and thermal management.
Use DGTD65T40S2PT as the confirmed public substitute.
The device can withstand a short circuit for up to 5 microseconds under specified conditions.
Yes, the datasheet specifies electrical characteristics for the integrated diode, including forward voltage and reverse recovery time.
The typical reverse recovery time is 80 nanoseconds when measured at a current change rate of 1000A/µs.