DI016N06PQ2-AQ

$0.22

Description：MOSFET 2N-CH 60V 16A 8TDSON
Series：-

SKU:bee327a66e42 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 16A 8TDSON
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Rds On (Max) @ Id, Vgs：33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1260pF @ 30V
Power - Max：16.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：TDSON-8-4
Grade：Automotive
Qualification：AEC-Q101

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DI016N06PQ2-AQ

Overview

The DI016N06PQ2-AQ is a dual N-channel power MOSFET from Diotec Semiconductor, housed in a QFN5x6- Dual package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 16 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 33 mΩ at VGS = 4.5 V and ID = 10 A. With a maximum junction temperature (Tjmax) of 175°C and a power dissipation (PD) of 20.2 W, it supports avalanche-rated operation with an energy rating (EAS) of 8.8 mJ. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification.

Feature Summary

Dual MOSFET configuration within a compact, low-profile surface-mount package
Logic level gate drive capability for efficient control
Avalanche rated and 100% avalanche tested for robustness
Compliant with RoHS standards and REACH regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific manufacturing lot and final AEC-Q101 certification status directly with Diotec Semiconductor or authorized distributors, as the -AQ suffix denotes ongoing qualification rather than completed compliance. Confirm that the QFN5x6- Dual package dimensions align with your PCB footprint requirements before placing orders.

Selection Notes

Select this component for applications requiring dual N-channel switching with low on-resistance and high thermal tolerance up to 175°C. Ensure the gate drive voltage meets the logic level threshold for optimal RDS(on) performance. Verify that the 20.2 W power dissipation rating is sufficient for your thermal management design under expected operating conditions.

Part Context

This part belongs to Diotec's dual MOSFET series designed for commercial and industrial grade applications. It utilizes a silicon planar technology to achieve low on-state resistance and fast switching times. The component is manufactured by Diotec Semiconductor AG and is intended for standard reliability applications unless otherwise specified.