DI045N03PT-AQ

$0.14

Description：MOSFET POWERQFN 3X3 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:4460f434a470 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：16W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI045N03PT-AQ

Overview

The DI045N03PT-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN3x3 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 45 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 4.4 mΩ at VGS = 10 V. With a maximum junction temperature (Tjmax) of 150°C and power dissipation (PD) of 16 W, it supports high-performance switching. The -AQ suffix indicates AEC-Q101 qualification for automotive applications.

Feature Summary

Tiny, space-saving package with low profile height
Low on-state resistance for efficient power handling
Fast switching times and low gate charge
AEC-Q101 qualified for automotive reliability

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific ordering suffix to confirm AEC-Q101 qualification status. Ensure compatibility with standard SMD/SMT assembly processes and check thermal management requirements against the specified power dissipation limits. Confirm RoHS compliance and conflict mineral declarations as per manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current density in a small footprint. The 30V rating suits low-voltage DC systems. Evaluate thermal resistance characteristics for heat sink design. Consider the avalanche energy rating for inductive load protection. Verify gate drive voltage compatibility with the threshold and on-state resistance specifications.

Part Context

This part belongs to the DI0XX series of N-Channel Power MOSFETs by Diotec Semiconductor. It utilizes silicon technology and is designed for commercial and industrial grade applications. The QFN3x3 case provides a robust mechanical structure suitable for automated surface mount assembly, offering a balance between electrical performance and physical size constraints.

Replacement Considerations

Check for direct substitutes within the DI0XX series or other manufacturers' 30V, 45A QFN3x3 MOSFETs. Ensure pinout compatibility and verify that replacement parts meet or exceed the RDS(on), VDSS, and thermal resistance specifications. Confirm if the alternative also holds AEC-Q101 qualification if automotive use is required.