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The DI045N10PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 45 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 6.5 mΩ at VGS = 10 V. It supports a maximum junction temperature (Tjmax) of 175°C and offers a power dissipation rating of 50 W. The component is fully qualified to the AEC-Q101 standard.
Verify the specific suffix -AQ confirms full AEC-Q101 qualification status as distinct from compliant grades. Confirm the exact package variant matches the design requirements, as the datasheet indicates availability in both QFN5x6 and TDSON-8 form factors. Ensure thermal management aligns with the specified junction temperature limits.
Select this component for applications requiring robust automotive-grade reliability alongside high current handling capabilities. The low RDS(on) minimizes conduction losses, while the avalanche-rated characteristic provides resilience against inductive load spikes. Consider the thermal resistance values when designing heat dissipation strategies for the target environment.
This part belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs. These devices are engineered for commercial, industrial, and automotive sectors, utilizing advanced trench technology to achieve low on-state resistance and fast switching speeds within a compact footprint suitable for modern electronic designs.
Check for DI045N10PQ or DI045N10PQ-Q if automotive qualification is not required. Verify pinout compatibility and electrical parameters against alternative suppliers' equivalents before substitution.