DI050P03PT

Overview

The DI050P03PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current applications within a compact QFN3x3 package. It features a drain-source voltage (VDSS) of -30 V and a continuous drain current (ID) of -50 A at TC = 100°C. The device exhibits a low on-state resistance (RDS(on)) of less than 8.0 mΩ at VGS = 4.5 V and ID = 15 A. With a maximum power dissipation (PD) of 39 W and a junction temperature range of -55°C to +150°C, it supports robust thermal performance. Key dynamic parameters include a total gate charge (Qg) of 70 nC and fast switching times.

Feature Summary

• Compact QFN3x3 package with low profile height for space-constrained designs
• Low on-state resistance to minimize conduction losses
• Fast switching characteristics with low gate charge
• High avalanche energy capability for rugged operation

Applications

• Power Management Units
• Battery powered devices
• Load Switches
• Polarity Protection circuits

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations align with project reliability requirements before finalizing orders. Ensure sourcing channels provide authentic Diotec Semiconductor products.

Selection Notes

Select this component for applications requiring high current handling in a small footprint. The -30V rating suits low-voltage DC systems. Evaluate thermal management needs based on the 39W dissipation limit and RthJA of 50 K/W. Consider the -Q or -AQ variants if automotive-grade standards are mandated. Verify gate drive compatibility with the specified threshold voltages.

Part Context

This part belongs to Diotec's P-Channel Power MOSFET lineup, optimized for efficiency and size. It utilizes silicon technology and is housed in a leadless QFN3x3 case. The product line emphasizes low profile construction and compliance with RoHS and REACH directives. It serves as a solution for modern electronics needing reliable power switching in compact form factors.

Replacement Considerations

Check pinout compatibility and electrical ratings against existing designs. Verify that substitute components meet or exceed the -50A current and <8.0mΩ resistance specifications. Ensure the replacement package matches the QFN3x3 dimensions for PCB integration.

FAQ

What is the maximum single pulse avalanche energy?

The DI050P03PT supports a single pulse avalanche energy (EAS) of 43.4 mJ under test conditions of VDD = 30 V, VG = 10 V, L = 0.1 mH, and RG = 25 Ω.

How does the RDS(on) vary with gate voltage?

At VGS = 10 V and ID = 20 A, the typical RDS(on) is 6.1 mΩ. At VGS = 4.5 V and ID = 15 A, the typical value is 8 mΩ, with a maximum of 13 mΩ.