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The DI070P04PQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-efficiency switching applications. It features a low-profile QFN5x6 (TDSON-8/DFN5060) package to save board space. Key electrical parameters include a drain-source voltage of -40 V and a continuous drain current of -70 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 9 mΩ and supports an avalanche energy rating of 101 mJ. Thermal performance includes a junction-to-case thermal resistance of 2.7 K/W, with a maximum operating junction temperature of 150°C.
Verify the specific suffix when ordering. The base model DI070P04PQ represents the standard commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm the required automotive grade version matches your application reliability standards before procurement.
Select this component for designs requiring compact surface-mount solutions with high current capacity. The QFN5x6 package offers a balance between thermal dissipation and footprint size. Ensure adequate heatsinking or PCB copper area is utilized to maintain junction temperatures within limits during continuous operation at high currents.
This part belongs to Diotec's Power MOSFET portfolio, specifically utilizing silicon technology in a lead-free, halogen-free construction compliant with RoHS directives. The product line targets general industrial and commercial electronics markets, offering standardized pinouts compatible with common power management topologies.
No public confirmed substitute part numbers are documented in the provided datasheet.
The DI070P04PQ is rated for a single pulse avalanche energy of 101 mJ under specified test conditions.
The standard DI070P04PQ is commercial/industrial grade. Automotive-grade versions are available with the -Q (compliant) or -AQ (qualified) suffixes indicating AEC-Q101 status.