DI100N04D1-AQ

$1.67

Description：MOSFET, DPAK, 40V, 100A, 0, 69W
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:917a97f93bc9 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET, DPAK, 40V, 100A, 0, 69W
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：100A
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：69W
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI100N04D1-AQ

Overview

The DI100N04D1-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, utilizing Advanced Trench Technology. It features a 40V drain-source voltage (VDSS) and supports a continuous drain current of 100A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 4 mΩ at VGS=10V and ID=30A. It operates within a junction temperature range of -55°C to +175°C and provides a single pulse avalanche energy rating of 164mJ. Packaged in a TO-252AA (D-PAK) format, it is AEC-Q101 qualified.

Feature Summary

Advanced Trench Technology for low on-state resistance
Avalanche rated capability
Fast switching times with low gate charge
AEC-Q101 qualified automotive grade

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering; the '-AQ' designation confirms AEC-Q101 qualification, whereas other suffixes may indicate different compliance levels. Confirm package type availability as standard versions utilize the TO-252AA form factor. Ensure design parameters align with the specified thermal resistance and power dissipation limits under your operating conditions.

Selection Notes

Select this component for high-current applications requiring robust avalanche performance and low conduction losses. The logic-level gate drive characteristics facilitate efficient control. Consider the thermal management requirements given the junction-to-case resistance and maximum operating temperature of 175°C for optimal reliability in industrial or automotive environments.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It represents a high-performance solution leveraging trench technology to minimize resistance while maintaining fast switching speeds. The product line includes variants with varying voltage and current ratings to suit diverse power conversion needs.

Replacement Considerations

Consult official Diotec documentation for direct substitutes. Cross-referencing requires matching VDSS, RDS(on), package dimensions, and thermal characteristics. Verify if alternative components meet the same AEC-Q101 qualification standards if automotive reliability is required.