DI260N04D2-AQ

$1.21

Description：DI260N04D2-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b078ef30a049 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI260N04D2-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4829 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DI260N04D2-AQ

Overview

The DI260N04D2-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-263AB (D2PAK) package. It features a drain-source voltage of 40 V and a continuous drain current of 260 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 1.50 mΩ at VGS = 10 V and ID = 90 A. It supports a power dissipation of 150 W and operates within a junction temperature range of -55°C to +175°C. The component is rated for single-pulse avalanche energy of 240 mJ.

Feature Summary

Advanced Trench Technology for low on-state resistance
Avalanche rated capability
Standard Level Gate Drive with low gate charge
Fast switching times

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix designation when ordering. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm the exact automotive grade status required for your application against the manufacturer's latest documentation before finalizing procurement specifications.

Selection Notes

Select this component for high-current applications requiring low conduction losses. Ensure adequate thermal management is provided, as the continuous drain current rating is limited by the package thermal resistance. Verify that the gate drive voltage aligns with the standard level gate drive requirements to achieve the specified on-state resistance values.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup designed for commercial and industrial grades. The product utilizes advanced trench technology to optimize performance metrics such as switching speed and conduction efficiency within the D2PAK form factor.