DI2A8N03PWK2-AQ

$0.11

Description：MOSFET 2N-CH 30V 2.8A 6QFN
Series：-

SKU:1e6c19cf7b2e Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 2.8A 6QFN
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Rds On (Max) @ Id, Vgs：72mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：387pF @ 15V
Power - Max：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：6-QFN (2x2)
Grade：Automotive
Qualification：AEC-Q101

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DI2A8N03PWK2-AQ

Overview

The DI2A8N03PWK2-AQ is a dual N-channel power MOSFET from Diotec Semiconductor, designed for automotive applications with AEC-Q101 qualification. It features a PowerQFN 2x2-Dual package and operates with a drain-source voltage of 30 V. The device provides a continuous drain current of 2.8 A at 25°C and supports peak currents up to 12 A. Key electrical characteristics include a maximum on-state resistance of 72 mΩ at VGS = 4.5 V and 102 mΩ at VGS = 2.5 V. Total gate charge is specified at 6.8 nC (VGS = 4.5 V) and 4 nC (VGS = 2.5 V). Thermal performance includes a junction temperature range of -55°C to +150°C and a thermal resistance of 125 K/W.

Feature Summary

Dual MOSFET configuration with integrated protected gate diodes
Automotive-grade reliability compliant with AEC-Q101 standards
Compact PowerQFN 2x2-Dual surface-mount package design
Low on-state resistance and fast switching capabilities

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix '-AQ' confirms AEC-Q101 qualification status as defined by the manufacturer. Confirm that the ordering part number matches the exact package type and marking code required for the assembly process. Ensure compliance with RoHS directives and REACH regulations during procurement. Validate the tape and reel specifications against the production line equipment requirements.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a compact footprint for automotive circuits. The 30 V rating suits low-voltage DC-DC conversion tasks. Evaluate the 72 mΩ RDS(on) limit against thermal dissipation needs within the 1.4 W power budget. Consider the 150°C junction temperature capability for high-temperature environments.

Part Context

This part belongs to Diotec's PowerQFN series of dual MOSFETs. The standard commercial version lacks automotive certification, whereas the '-AQ' suffix denotes AEC-Q101 qualification. This distinction ensures suitability for automotive electronics requiring higher reliability and stricter manufacturing controls compared to general industrial components.