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The DI7A5N65D2K is an N-Channel Power MOSFET in a TO-263AB (D2PAK) package. It features a Drain-Source voltage of 650 V and a continuous Drain current of 7.5 A at 25°C case temperature. The device has a maximum on-state resistance of 430 mΩ at VGS = 10 V and ID = 4 A. Peak pulse drain current reaches 25.0 A, with single pulse avalanche energy rated at 174 mJ. Power dissipation is 62.5 W at TC = 25°C. Junction temperature ranges from -55°C to +150°C.
Verify the specific suffix when ordering. The base model DI7A5N65D2K represents the commercial/industrial grade standard version. Suffixes -Q and -AQ denote AEC-Q101 compliance or qualification respectively. Confirm the required reliability grade matches the application environment before procurement.
Select this component for high-voltage switching applications requiring robust avalanche handling. Ensure thermal management supports the specified power dissipation limits. Verify gate drive levels align with the standard level gate requirements. Check if automotive-grade variants are necessary for specific industry standards.
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes advanced trench technology to achieve low on-state resistance within a D2PAK package. The series includes variants compliant with automotive standards for broader application scope.
No public confirmed substitute part numbers are documented.