DI7A5N65D2K

DI7A5N65D2K

$0.87
  • Description:MOSFET D2PAK N 650V 7.5A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:d6ae28bfd7fa Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET D2PAK N 650V 7.5A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:430mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18.4 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:722 pF @ 325 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263AB (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

DI7A5N65D2K

Overview

The DI7A5N65D2K is an N-Channel Power MOSFET in a TO-263AB (D2PAK) package. It features a Drain-Source voltage of 650 V and a continuous Drain current of 7.5 A at 25°C case temperature. The device has a maximum on-state resistance of 430 mΩ at VGS = 10 V and ID = 4 A. Peak pulse drain current reaches 25.0 A, with single pulse avalanche energy rated at 174 mJ. Power dissipation is 62.5 W at TC = 25°C. Junction temperature ranges from -55°C to +150°C.

Feature Summary

  • Advanced Trench Technology for low on-state resistance
  • Standard Level Gate Drive capability
  • ESD-protected Gate structure
  • Avalanche rated performance

Applications

  • Power Supplies
  • Power Factor Correction (PFC)
  • High Voltage DC Drives
  • Battery Management Systems (BMS)

Procurement Notes

Verify the specific suffix when ordering. The base model DI7A5N65D2K represents the commercial/industrial grade standard version. Suffixes -Q and -AQ denote AEC-Q101 compliance or qualification respectively. Confirm the required reliability grade matches the application environment before procurement.

Selection Notes

Select this component for high-voltage switching applications requiring robust avalanche handling. Ensure thermal management supports the specified power dissipation limits. Verify gate drive levels align with the standard level gate requirements. Check if automotive-grade variants are necessary for specific industry standards.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes advanced trench technology to achieve low on-state resistance within a D2PAK package. The series includes variants compliant with automotive standards for broader application scope.

Replacement Considerations

No public confirmed substitute part numbers are documented.

DI7A5N65D2KDI7A5N65D2K
$0.87
Buy Now