DIF120SIC053-AQ

$21.19

Description：MOSFET TO-247-4L N 65A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:79d5492e0884 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-247-4L N 65A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：53mOhm @ 33A, 18V
Vgs(th) (Max) @ Id：4V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs：121 nC @ 15 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DIF120SIC053-AQ

Overview

The DIF120SIC053-AQ is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features a TO-247-4L package with a Kelvin source terminal for optimized switching performance. The device provides a drain-source voltage of 1200 V and a continuous drain current of 68 A at 25°C case temperature. Maximum power dissipation is rated at 278 W, with a junction temperature range from -55°C to +175°C. The typical on-state resistance is 40 mΩ at 25°C, rising to 65 mΩ at 175°C.

Feature Summary

Utilizes SiC wide bandgap material for high thermal stability and low conduction losses.
Incorporates a dedicated Kelvin source pin to minimize gate noise and enable faster switching speeds.
Features large clearance and creepage distances within the package design.
Compliant with RoHS, REACH, and Conflict Minerals regulations.

Applications

EV Charging Stations
Solar Inverter
Battery Charger
Power Supplies

Procurement Notes

Verify that the specific ordering suffix matches the required qualification level. The '-AQ' designation indicates the component is in the process of AEC-Q101 qualification, whereas other suffixes may denote different compliance statuses. Confirm the exact datasheet version before finalizing procurement specifications to ensure alignment with current manufacturing parameters.

Selection Notes

Select this component for applications requiring high-voltage handling and efficient thermal management. The TO-247-4L package facilitates robust heat sinking via the heat flange. Ensure the external gate resistance is optimized to balance switching speed against electromagnetic interference, as switching energy varies significantly with gate drive conditions.

Part Context

This part belongs to the DIF120SIC series of silicon carbide MOSFETs from Diotec Semiconductor. These devices are designed for commercial and industrial grade applications. The series utilizes advanced SiC technology to achieve superior performance compared to traditional silicon-based power switches in high-frequency environments.

Replacement Considerations

Public confirmed substitute part numbers: DIW120SIC023-AQ, DIW120SIC059-AQ.

FAQ

What is the function of the fourth lead in the TO-247-4L package?

The fourth lead serves as a Kelvin source connection. This separate path allows for faster switching and reduces noise levels at the gate terminal during operation.