ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET TO220AB N 30V 0.0023OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：130W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The DIT150N03 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-220AB package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 150 A at 25°C case temperature. The device exhibits a typical on-state resistance (RDS(on)) of 2.3 mΩ at VGS = 10 V and ID = 20 A. Maximum power dissipation (PD) is rated at 130 W at 25°C, with a junction temperature range from -55°C to +175°C. Single pulse avalanche energy (EAS) is specified as 1700 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Fast switching times with low gate charge
- Avalanche rated capability
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the commercial grade specification aligns with the reliability requirements of the target application. Ensure thermal management designs account for the specified maximum junction temperature and power dissipation limits under actual operating conditions.
Selection Notes
Select this component when high current handling and low conduction losses are required in standard commercial applications. The TO-220AB package facilitates effective heat sinking for high-power scenarios. Evaluate the 30 V rating and 150 A capacity against circuit demands to ensure adequate safety margins during peak load operations.
Part Context
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET portfolio. It utilizes advanced trench technology to achieve low RDS(on) and fast switching characteristics. The device is designed for robust performance in industrial and consumer electronics requiring efficient power control.
Replacement Considerations
Consult official Diotec documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package or generic parameters without verifying electrical specifications and pin configurations.
