DKI04046

Single FETs, MOSFETs Overview

The DKI04046 is a 40 V N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum continuous drain current of 48 A at 25 °C case temperature and a low on-resistance of 5.6 mΩ maximum at VGS = 10 V. The device supports 4.5 V gate drive with a total gate charge of 16.0 nC, enabling high-speed switching. It is housed in a TO-252 package and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for efficient power conduction
• Capable of operation with 4.5 V gate drive voltage
• High-speed switching characteristics enabled by low total gate charge
• Manufactured using Trench technology

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification circuits
• General power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new designs. Confirm that the TO-252 package dimensions and pinout match your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance to maintain reliability within the 150 °C operating limit.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and 48 A continuous current capability are required in a surface-mount TO-252 package. Consider its low gate charge for applications prioritizing fast switching speeds. Evaluate the thermal performance against your specific ambient temperature and PCB copper pad constraints to ensure safe operating area compliance.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to Sanken Electric's discrete semiconductor lineup designed for power conversion. It utilizes trench technology to achieve low on-resistance and fast switching. The product is intended for general-purpose electronic equipment such as home appliances and industrial machinery, adhering to standard automotive and industrial quality certifications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the DKI04046 is marked as not recommended for new designs, alternative components must be selected based on matching electrical parameters (VDS, ID, RDS(ON)) and package compatibility rather than direct cross-references.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate to Source Voltage (VGS) is ± 20 V.

Is the device suitable for unclamped inductive switching?

Yes, the datasheet specifies an Single Pulse Avalanche Energy (EAS) rating of 89 mJ under defined test conditions.

What is the typical reverse recovery time of the body diode?

The typical Source to Drain Diode Reverse Recovery Time (trr) is 32.9 ns when tested at IF = 42.8 A and di/dt = 100 A/µs.