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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 9.5A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：9.5A, 6.9A
- Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1495pF @ 6V
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：-
- Qualification：-
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Overview
The DMC1015UPD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single PowerDI5060-8 package. The N-channel transistor provides a drain-source voltage of 12V with a maximum on-resistance of 17mΩ at VGS=4.5V, supporting a continuous drain current of 9.5A. The P-channel counterpart features a -20V breakdown voltage and a maximum on-resistance of 35mΩ at VGS=-4.5V, handling up to -6.8A. Total power dissipation reaches 2.3W at +25°C ambient temperature.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Optimized structure minimizing on-state losses while maintaining superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device configuration
Applications
- Notebook battery power management systems
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific package variant (Type C or Type R) required for your PCB layout before ordering. Confirm that the standard JEDEC qualified version meets your reliability requirements rather than the automotive grade Q-suffix parts. Ensure the tape and reel quantity matches your production line capacity.
Selection Notes
Select this component when space constraints require a dual complementary MOSFET solution in a low-profile surface mount package. Evaluate the thermal resistance characteristics against your expected duty cycles and ambient temperatures. Verify gate drive voltages align with the specified thresholds for optimal conduction efficiency.
Part Context
This part belongs to the DMC1015UPD series of complementary enhancement mode MOSFETs from Diodes Incorporated. It is designed as a high-density solution for portable electronics where board real estate is limited. The series focuses on balancing low static resistance with fast dynamic switching capabilities.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pin configurations and electrical ratings for both N-channel and P-channel elements within the complementary pair.
